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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639 NPN medium power transistors
Product specification Supersedes data of 1999 Apr 23 2001 Oct 10
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES * High current (max. 1 A) * Low voltage (max. 80 V). APPLICATIONS * Driver stages of audio/video amplifiers. DESCRIPTION
1 handbook, halfpage
BC635; BC637; BC639
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640.
2 3
2 1 3
MAM259
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO BC635 BC637 BC639 VCEO collector-emitter voltage BC635 BC637 BC639 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C open collector open base - - - - - - - - -65 - -65 45 60 80 5 1 1.5 200 0.83 +150 150 +150 V V V V A A mA W C C C PARAMETER collector-base voltage CONDITIONS open emitter - - - 45 60 100 V V V MIN. MAX. UNIT
2001 Oct 10
2
Philips Semiconductors
Product specification
NPN medium power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V PARAMETER thermal resistance from junction to ambient
BC635; BC637; BC639
CONDITIONS note 1
VALUE 150
UNIT K/W
MIN. - - - 63 63 40 63 100
MAX. 100 10 100 - 250 - 160 250 500 1 - 1.6
UNIT nA A nA
IE = 0; VCB = 30 V; Tj = 150 C IC = 0; VEB = 5 V VCE = 2 V; see Fig.2 IC = 5 mA IC = 150 mA IC = 500 mA DC current gain BC639-10 BC635-16; BC637-16; BC639-16 VCEsat VBE fT h FE1 ----------h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = 500 mA; IB = 50 mA IC = 500 mA; VCE = 2 V IC = 50 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2 V IC = 150 mA; VCE = 2 V; see Fig.2
- - 100 -
mV V MHz
2001 Oct 10
3
Philips Semiconductors
Product specification
NPN medium power transistors
BC635; BC637; BC639
handbook, full pagewidth
160
MBH729
hFE 120
VCE = 2 V
80
40
0 10-1
1
10
102
IC (mA)
103
Fig.2 DC current gain; typical values.
2001 Oct 10
4
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
BC635; BC637; BC639
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
2001 Oct 10
5
Philips Semiconductors
Product specification
NPN medium power transistors
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development
BC635; BC637; BC639
DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Oct 10
6
Philips Semiconductors
Product specification
NPN medium power transistors
NOTES
BC635; BC637; BC639
2001 Oct 10
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp8
Date of release: 2001
Oct 10
Document order number:
9397 750 08738

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